Title of article
Adsorption sites of Te on Si(0 0 1)
Author/Authors
Lyman، نويسنده , , P.F and Walko، نويسنده , , D.A and Marasco، نويسنده , , D.L and Hutchason، نويسنده , , H.L and Keeffe، نويسنده , , M.E and Montano، نويسنده , , P.A and Bedzyk، نويسنده , , M.J، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
13
From page
248
To page
260
Abstract
Using multiple surface science techniques, we have investigated the structure of 0.3–1 Te monolayers adsorbed on Si(0 0 1). X-ray standing waves, low-energy electron diffraction, temperature-programmed desorption, and Auger electron spectroscopy show a relatively poorly-ordered surface. The disorder is due to two nearly degenerate Te adsorption sites, which tends to double the periodicity along one direction of the surface and reduces adatom/substrate mismatch by slightly increasing the separation of adjacent Te atoms. High-temperature anneals around 575 °C increase the degree of local and long-range order, while leaving the average local structure unchanged. Our findings are consistent with recent ab initio molecular dynamics simulations but not with experimental studies wherein surfaces were prepared by desorption of CdTe films.
Keywords
Low energy electron diffraction (LEED) , surface structure , Thermal desorption spectroscopy , and topography , Roughness , morphology , Chalcogens , Silicon , Low index single crystal surfaces , X-ray standing waves
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684755
Link To Document