Layer-by-layer growth of lead on Ge(1 1 1) at low temperatures

The growth of lead on Ge(1 1 1) at 120 K was investigated by various experimental methods. He atom scattering experiments were used to determine the low temperature growth morphology of the Pb/Ge(1 1 1) system. The growth modes at low and room temperature were also compared by Auger electron spectroscopy, low energy electron diffraction, and by the observation of inelastic electron scattering through image potential resonances indicating the presence of Pb islands at 300 K and of a continuous Pb film at 120 K. In contrast to the well-known room temperature Stranski–Krastanov growth mode, strong evidence for a layer-by-layer growth from three monolayers coverage onwards was found for Pb on Ge(1 1 1) at low temperature.