Well-ordered ultra-thin Al2O3 film formation on NiAl(1 1 0) by high-temperature oxidation

NiAl(1 1 0) was oxidized at high temperature in an ultra-high vacuum. To examine the range of oxidation condition for a well-ordered ultra-thin Al2O3 film formation, oxidation was carried out at 970, 1070, and 1100 K by exposing the specimen to 1200 L oxygen under partial oxygen pressures of 6.6 × 10−5 and 6.6 × 10−6 Pa. LEED observation revealed that a crystalline Al2O3 formed at 1070 K under 6.6 × 10−6 Pa oxygen was best ordered among the present experimental conditions.