Title of article
Sm-induced reconstructions on Si(1 1 1) surface
Author/Authors
Ehret، نويسنده , , E. and Palmino، نويسنده , , F. and Mansour، نويسنده , , L. and Duverger، نويسنده , , E. and Labrune، نويسنده , , J.-C.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2004
Pages
10
From page
23
To page
32
Abstract
Using scanning tunneling microscopy (STM) and low energy electron diffraction (LEED), the surface reconstructions induced by submonolayer Sm adsorption on a Si(1 1 1) have been studied. This system forms a series of metal-induced n × 1 (n = 3, 5, 7,…) reconstructions with increase of Sm coverage on the Si(1 1 1) substrate at elevated temperatures. Our STM results indicate that these reconstructions appear as well-ordered row-like structures. Local mixing of the 3 × 1 and n × 1 unit cells (or stripes) indicates that the atomic models for these phases should be closely related. The atomically resolved STM images reveal a strong bias dependence which determine the relative registry of the Si as well as Sm atoms for these reconstructions. Our results are consistent with the chain-channel models of the row-like structures of the Ca/Si(1 1 1) system as proposed in the literature.
Keywords
Silicon , Surface relaxation and reconstruction , Scanning tunneling microscopy
Journal title
Surface Science
Serial Year
2004
Journal title
Surface Science
Record number
1684867
Link To Document