Title of article :
Growth and electronic structure of holmium silicides by STM and STS
Author/Authors :
Perkins، نويسنده , , E.W. and Scott، نويسنده , , I.M. and Tear، نويسنده , , S.P.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Pages :
8
From page :
80
To page :
87
Abstract :
The growth of holmium on the Si(1 1 1) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 × 2 and ( 2 3 × 2 3 ) R30° were observed during the nucleation of the 1 × 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 × 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides.
Keywords :
Silicides , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Solid phase epitaxy , GROWTH , Surface relaxation and reconstruction , Lanthanides , Metal–semiconductor interfaces
Journal title :
Surface Science
Serial Year :
2005
Journal title :
Surface Science
Record number :
1685063
Link To Document :
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