Title of article
Growth and electronic structure of holmium silicides by STM and STS
Author/Authors
Perkins، نويسنده , , E.W. and Scott، نويسنده , , I.M. and Tear، نويسنده , , S.P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
8
From page
80
To page
87
Abstract
The growth of holmium on the Si(1 1 1) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 × 2 and ( 2 3 × 2 3 ) R30° were observed during the nucleation of the 1 × 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 × 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides.
Keywords
Silicides , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Solid phase epitaxy , GROWTH , Surface relaxation and reconstruction , Lanthanides , Metal–semiconductor interfaces
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685063
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