• Title of article

    Growth and electronic structure of holmium silicides by STM and STS

  • Author/Authors

    Perkins، نويسنده , , E.W. and Scott، نويسنده , , I.M. and Tear، نويسنده , , S.P.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2005
  • Pages
    8
  • From page
    80
  • To page
    87
  • Abstract
    The growth of holmium on the Si(1 1 1) surface in the sub-monolayer region was investigated using STM. Several metastable reconstructions, including 5 × 2 and ( 2 3 × 2 3 ) R30° were observed during the nucleation of the 1 × 1 2D rare earth (RE) silicide surface. The authors attempt to combine this data into a detailed picture of the development of the surface, and identify future directions for improving interface quality. Scanning tunnelling spectroscopy data were taken from the 1 × 1 surface, and compared with published theoretical and photoemission results from other 2D RE silicides.
  • Keywords
    Silicides , Scanning tunneling microscopy , Scanning tunneling spectroscopies , Solid phase epitaxy , GROWTH , Surface relaxation and reconstruction , Lanthanides , Metal–semiconductor interfaces
  • Journal title
    Surface Science
  • Serial Year
    2005
  • Journal title
    Surface Science
  • Record number

    1685063