Title of article :
Samarium-induced surface reconstructions of Si(0 0 1)
Author/Authors :
Ohbuchi، نويسنده , , C. and Nogami، نويسنده , , J.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Abstract :
The growth of Sm on Si(0 0 1) at 600 °C was studied by scanning tunneling microscopy. There are two different surface reconstructions: a lower coverage 2 × 3 phase and a higher coverage 3 × 2 phase. Sm zigzag chain structures coexist with the 2 × 3 structure at low coverage. The 3 × 2 phase coexists with a related c(6 × 2) phase. At higher coverages, large 3D Sm silicide islands are found.
Keywords :
Scanning tunneling microscopy , surface structure , morphology , and topography , Roughness , Silicon , Samarium , silicide , Surface relaxation and reconstruction
Journal title :
Surface Science
Journal title :
Surface Science
