Title of article :
An ab initio study of C60 adsorption on the Si(0 0 1) surface
Author/Authors :
Hobbs، نويسنده , , Chris and Kantorovich، نويسنده , , Lev and Gale، نويسنده , , Julian D.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2005
Pages :
11
From page :
45
To page :
55
Abstract :
Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.
Journal title :
Surface Science
Serial Year :
2005
Journal title :
Surface Science
Record number :
1685316
Link To Document :
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