Title of article
A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(1 1 1)
Author/Authors
Wood، نويسنده , , T.J. and Bonet، نويسنده , , C. J. Noakes، نويسنده , , T.C.Q and Bailey، نويسنده , , P. and Tear، نويسنده , , S.P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2005
Pages
8
From page
120
To page
127
Abstract
Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (1 1 1). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1–Si2 vertical spacing of 0.80 ± 0.03 Å, but with the Si bilayer relaxed slightly further away from the Y layer (Si2–Y vertical spacing of 1.89 ± 0.02 Å). Observing the effects of the top bilayer vibrations yields a model with significant enhancements.
Keywords
Medium energy ion scattering (MEIS) , scattering , Ion–solid interactions , Surface relaxation and reconstruction , channeling , surface structure , morphology , Roughness , Metal–semiconductor interfaces , Silicon , Silicides , and topography , Yttrium
Journal title
Surface Science
Serial Year
2005
Journal title
Surface Science
Record number
1685507
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