• Title of article

    A medium-energy ion scattering investigation of the structure and surface vibrations of two-dimensional YSi2 grown on Si(1 1 1)

  • Author/Authors

    Wood، نويسنده , , T.J. and Bonet، نويسنده , , C. J. Noakes، نويسنده , , T.C.Q and Bailey، نويسنده , , P. and Tear، نويسنده , , S.P.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2005
  • Pages
    8
  • From page
    120
  • To page
    127
  • Abstract
    Medium-energy ion scattering has been used to determine the atomic structure of two-dimensional yttrium silicide on silicon (1 1 1). A full quantitative analysis of the atomic positions of the Si atoms in the top bilayer yields a model similar to that previously suggested in the literature with a Si1–Si2 vertical spacing of 0.80 ± 0.03 Å, but with the Si bilayer relaxed slightly further away from the Y layer (Si2–Y vertical spacing of 1.89 ± 0.02 Å). Observing the effects of the top bilayer vibrations yields a model with significant enhancements.
  • Keywords
    Medium energy ion scattering (MEIS) , scattering , Ion–solid interactions , Surface relaxation and reconstruction , channeling , surface structure , morphology , Roughness , Metal–semiconductor interfaces , Silicon , Silicides , and topography , Yttrium
  • Journal title
    Surface Science
  • Serial Year
    2005
  • Journal title
    Surface Science
  • Record number

    1685507