Title of article
Structural and electronic characterization of the MgO/Mo(0 0 1) interface using STM
Author/Authors
Benia، نويسنده , , H.M. and Myrach، نويسنده , , P. and Nilius، نويسنده , , Luke N. and Freund، نويسنده , , H.-J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2010
Pages
7
From page
435
To page
441
Abstract
The nucleation and growth of ultrathin MgO films on Mo(0 0 1) have been investigated with scanning tunneling microscopy and spectroscopy. In the initial growth stage, the MgO forms rather uniform islands with rectangular shapes and defined orientation. This behavior reflects a preferential binding of the oxide O ions to the top positions in the Mo support, which can be realized only in confined areas due to the MgO/Mo lattice mismatch. At monolayer coverage, a characteristic square pattern becomes visible in the STM, indicating the formation of an MgO/Mo coincidence lattice. In the coincidence cell, the interface registry alternates between O and Mg ions being in Mo top positions. The resulting imaging contrast in the STM is dominated by a work-function modulation and not by a topographic effect, as demonstrated with STM-conductance and light-emission spectroscopy. The modulated work function in the coincidence cell is assigned to a small buckling of the oxide film with either O or Mg ions being closer to the Mo surface.
Keywords
Oxide thin films , Nucleation and growth , Coincidence lattice , MGO , MO , Scanning tunneling microscopy and spectroscopy
Journal title
Surface Science
Serial Year
2010
Journal title
Surface Science
Record number
1685660
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