Title of article :
Adsorption and desorption of fullerene on graphene/SiC(0001)
Author/Authors :
Jee، نويسنده , , Hae-geun and Han، نويسنده , , Jin-Hee and Hwang، نويسنده , , Hanna Y. Kim، نويسنده , , Young Dok and Hwang، نويسنده , , Chan Cuk Hwang، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2011
Pages :
5
From page :
649
To page :
653
Abstract :
Adsorption and desorption of fullerene on a single layer of graphene grown on SiC(0001) were investigated by photoemission spectroscopy (PES). No significant change in the band structure of graphene was observed after fullerene deposition on the graphene layer under vacuum conditions, and subsequent exposure to the air. After annealing the fullerene layer at 275 °C in a vacuum, complete desorption of fullerene was observed without any resulting damage to the graphene structure. The desorption temperature of fullerene was significantly higher than that of pentacene, indicating that fullerene layers show higher stability than pentacene as protection layers of graphene-based devices.
Keywords :
Dirac point (ED) , Graphene-based devices , Photoemission spectroscopy (PES) , Angle resolved photoemission spectroscopy (ARPES) , Protection layer , Synchrotron
Journal title :
Surface Science
Serial Year :
2011
Journal title :
Surface Science
Record number :
1686016
Link To Document :
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