Title of article :
Tin-stabilized (1 × 2) and (1 × 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Author/Authors :
Lهng، نويسنده , , J.J.K. and Laukkanen، نويسنده , , P. and Punkkinen، نويسنده , , M.P.J. and Ahola-Tuomi، نويسنده , , M. I. Kuzmin، نويسنده , , M. and Tuominen، نويسنده , , V. and Dahl، نويسنده , , Timo J. and Tuominen، نويسنده , , M. and Perنlن، نويسنده , , R.E. and Schulte، نويسنده , , K. and Adell، نويسنده , , J. and Sadowski، نويسنده , , J. and Kanski، نويسنده , , J. and Guina، نويسنده , , M. and Pessa، نويسنده , , M. L. Kokko، نويسنده , , K. and Johansson، نويسنده , , B. and Vitos، نويسنده , , L. and Vنyrynen، نويسنده , , I.J.، نويسنده ,
Abstract :
Tin (Sn) induced (1 × 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn–III dimers. Furthermore, a new Sn-induced (1 × 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 × 2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.
Keywords :
Scanning-tunneling microscopy , Synchrotron radiation photoelectron spectroscopy , Ab initio calculations , surface reconstruction , Indium-arsenide (InAs) , Gallium-arsenide (GaAs) , Single crystal surfaces
