Author/Authors :
Merckling، نويسنده , , C. and Chang، نويسنده , , Y.C. and Lu، نويسنده , , C.Y. and Penaud، نويسنده , , J. and Brammertz، نويسنده , , G. and Scarrozza، نويسنده , , M. and Pourtois، نويسنده , , G. and Kwo، نويسنده , , J. and Hong، نويسنده , , M. and Dekoster، نويسنده , , J. and Meuris، نويسنده , , M. and Heyns، نويسنده , , M. and Caymax، نويسنده , , M.، نويسنده ,
Abstract :
The integration of higher carrier mobility materials to increase drive current capability in the next CMOS generations is required for device scaling. But a fundamental issue regarding the introduction of high-mobility III–V in CMOS is the electrical passivation of the interface with the high-κ gate dielectric. In this work, we show that in situ H2S surface treatment on GaAs(001) leads to a stable and reorganized oxide/III–V interface. The exposition of the GaAs surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. Finally, MOS capacitors are fabricated to extract interface state density over the band gap. These results highlight a promising re-interest in chalcogenide passivation of III–V surfaces for CMOS applications.
Keywords :
GaAs , Molecular Beam Epitaxy , CMOS , High-? dielectrics , H2S passivation
