Title of article
Structure of the In-rich InAs (001) surface
Author/Authors
Goryl، نويسنده , , G. and Toton، نويسنده , , D. and Goryl، نويسنده , , M. and Tomaszewska، نويسنده , , N. and Kolodziej، نويسنده , , J.J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2011
Pages
9
From page
2073
To page
2081
Abstract
Using scanning tunneling microscopy, frequency-modulated scanning atomic-force microscopy, electron diffraction, and density functional theory calculations we investigate a structure of the InAs (001) surface displaying c(8 × 2)/(4 × 2) reconstruction at room temperature. It is found that the room temperature data are satisfactorily interpreted based on the model proposed by Kumpf et al. [Phys. Rev. Lett. 86, 3586 (2001)], however, at cryogenic temperatures the model fails since a different structure, characterized by fourfold period along [110] crystallographic direction, partial disorder and instability, is observed. By the present study we find that the structure is described by corrected Kumpf et al. model where most of atomic rows are left as in the original model and only the dominant indium atom rows running along [110] are changed. At room temperature the dominant rows are disordered and rapidly fluctuate thermally while at cryogenic temperatures they convert to chains of indium aggregates and acquire fourfold period. Moreover, frequently observed incomplete occupancy of the dominant indium rows leads to many different local surface structures, reflected by characteristic “features” in scanning tunneling microscopy patterns. We have classified and explained most of these structures.
Keywords
Surface structure calculations , Atomic-force microscopy , III–V semiconductors , Scanning tunneling microscopy , Surface structure , Density functional theory
Journal title
Surface Science
Serial Year
2011
Journal title
Surface Science
Record number
1686228
Link To Document