Control of the degree of surface graphitization on 3C-SiC(100)/Si(100)

The current method of growing graphene by thermal decomposition of 3C-SiC(100) on silicon substrates is technologically attractive. Here, we investigate the evolution of the surface graphitization as a function of the synthesis temperature. We establish that the carbon enrichment of the surface is characterized by a clear modulation of the surface potential and structuration. The structural properties analysis of the graphene layers by low energy electron diffraction and micro-Raman spectroscopy demonstrate a graphitization of the surface.