Title of article :
Peierls-like phase transitions in domain walls
Author/Authors :
Schmeidel، نويسنده , , Jedrzej and Pfnür، نويسنده , , Herbert and Tegenkamp، نويسنده , , Christoph، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2012
Pages :
5
From page :
362
To page :
366
Abstract :
In this paper, we give an example how domain walls (DW) within an adsorbed monolayer form one-dimensional localized electronic states. We investigated in detail the Ag 3 × 3 phase on Si (111), a prototype system for a low dimensional electron gas, by means of scanning tunneling microscopy. The doubling of the periodicity along the DW-direction at low temperatures (80 K) suggests a metal–insulator transition of Peierls type. The superimposed intensity modulation in the direction across the DW can be interpreted in terms of lateral quantum well states. However, the simultaneous vanishing of both features at room temperature indicates more complicated changes in band structure and/or wave functions during the transition than described by the simple Peierls model.
Keywords :
Metal semiconductor interface , Peierls transition , domain wall , STM
Journal title :
Surface Science
Serial Year :
2012
Journal title :
Surface Science
Record number :
1686288
Link To Document :
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