Title of article
First-principles study of Si(111)-In reconstruction
Author/Authors
Chukurov، نويسنده , , E.N. and Alekseev، نويسنده , , A.A. and Kotlyar، نويسنده , , V.G. and Olyanich، نويسنده , , D.A. and Zotov، نويسنده , , A.V. and Saranin، نويسنده , , A.A.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2012
Pages
4
From page
1914
To page
1917
Abstract
Using first-principles total-energy calculations, structural properties of the Si(111) 31 × 31 -In reconstruction have been studied. New refined structural model of the reconstruction has been proposed which adopts 17 In atoms and 31 Si atoms. The model is characterized by the reasonably low surface energy and demonstrates good correspondence between simulated and experimental scanning tunneling microscopy images. Calculations reveal semiconducting nature of the model structure in agreement with experiment.
Keywords
Silicon , topography , morphology , Indium , Scanning tunneling microscopy (STM) , surface structure , Roughness , Atom–solid interactions
Journal title
Surface Science
Serial Year
2012
Journal title
Surface Science
Record number
1687181
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