• Title of article

    DFT calculation of the electronic properties and EEL spectrum of NiSi2

  • Author/Authors

    Efrain and Nٌْez-Gonzلlez، نويسنده , , Roberto and Reyes-Serrato، نويسنده , , Armando and Galvلn، نويسنده , , Donald H. and Posada-Amarillas، نويسنده , , Alvaro، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    6
  • From page
    15
  • To page
    20
  • Abstract
    Electronic structure and optical properties calculations of NiSi2 were carried out using the Full-Potential Linearized Augmented Plane Waves (FLAPW) method, within the Density Functional Theory (DFT) with the Local Density Approximation (LDA). Band structure and total and projected density of states (DOS) are calculated as well as the theoretical Electron Energy-Loss (EEL) Spectrum, utilizing experimental lattice parameters. Our theoretical EELS results are in agreement with recent experimental findings, indicating that the main peak corresponds to a plasmon. Additional peaks in our calculations are identified as interband transitions (at 2.67 eV, 4.77 eV and 6.1 eV) associated to transitions between Ni d and Si p states, and low magnitude plasmons (at 1.3 eV and 4.02 eV).
  • Keywords
    Ab initio , DFT , Electronic structure , Optical properties , Transition metals silicides
  • Journal title
    Computational Materials Science
  • Serial Year
    2010
  • Journal title
    Computational Materials Science
  • Record number

    1687522