Title of article :
In situ surface phases and silicon-adatom geometry of the (2×2)C structure on 6H-SiC(0001̄)
Author/Authors :
Seubert، نويسنده , , A. Thybusch-Bernhardt، نويسنده , , J. and Nerding، نويسنده , , M. and Starke، نويسنده , , U. and Heinz، نويسنده , , K.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Abstract :
A (2×2) reconstruction on 6H-SiC(0001̄), obtained by annealing an ex situ prepared or a silicon-capped sample, was investigated using quantitative low-energy electron diffraction. The surface geometry is characterized by one silicon adatom per unit cell in three-fold hollow coordination (H3 sites). The topmost two substrate bilayers are found to be preferentially rotated by 60° with respect to each other, corresponding to a hexagonal type of stacking present at the very surface.
Keywords :
Low energy electron diffraction (LEED) , Low index single crystal surfaces , Scanning tunneling microscopy , surface structure , morphology , Roughness , and topography , silicon carbide , Auger electron spectroscopy , Growth
Journal title :
Surface Science
Journal title :
Surface Science
