• Title of article

    Modelling and simulation of reaction mechanisms in early growth of STO thin films from ab initio calculations

  • Author/Authors

    Yang، نويسنده , , Chun-Li Yi، نويسنده , , Yu and Li، نويسنده , , Yan Rong، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    5
  • From page
    845
  • To page
    849
  • Abstract
    Understanding microscopic reaction processes and particle states in the early growth of SrTiO3 (STO) thin films is very important to control the growth and prepare well-structured STO thin films. To this end, we use a generalized gradient approximation within density functional theory (DFT) at the PW91/DNP level to investigate the reaction processes of Sr, Ti, and O, the formation of SrO and TiO2, and the microscopic reaction mechanism underlying the formation of STO. We calculate the reaction intermediates, transition states (TSs), and activation energy and explore the STO formation mechanisms using highest-occupied and lowest-unoccupied molecular orbital theory. In addition, several possible conformations of STO molecules are comparatively investigated. We find that in steady-state conformations of STO, the geometry eigenvalue is similar to the STO unit cell, which indicates that SrO, TiO2, and STO are the primary particle states during the early growth of STO thin films. Because it acts as a combining center, TiO2 is preferentially formed and, subsequently, SrO combines with these centers to form STO, which is stable and somewhat similar to the STO crystal cell. These mechanisms lead to the formation of perovskite-structured STO thin films.
  • Keywords
    oxides , Thin films , surfaces , Ab initio calculations , Computer modelling and simulation
  • Journal title
    Computational Materials Science
  • Serial Year
    2010
  • Journal title
    Computational Materials Science
  • Record number

    1687903