Title of article
Metal-induced gap states at InAs(110) surface
Author/Authors
Betti، نويسنده , , M.G and Bertoni، نويسنده , , G and Corradini، نويسنده , , V and De Renzi، نويسنده , , V and Mariani، نويسنده , , C، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
4
From page
539
To page
542
Abstract
High-luminosity and high-energy-resolution photoemission spectroscopy can provide direct observation of the spectral density of metal-induced states throughout the whole band gap, even at extremely low metal deposition. We present a study of the density of states of a two-dimensional electron gas induced in the InAs(110) conduction band by deposition of caesium, antimony and silver adatoms. We follow the density of states redistribution between the two-dimensional electron-gas channel and the appearance of metal-induced gap states.
Keywords
Indium arsenide , Metal–semiconductor interfaces , Schottky barrier , Photoemission (total yield)
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688171
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