Author/Authors :
Bertoncini، نويسنده , , P. and Berling، نويسنده , , D. and Wetzel، نويسنده , , P. and Mehdaoui، نويسنده , , A. and Loegel، نويسنده , , B. and Gewinner، نويسنده , , G. and Ulhaq-Bouillet، نويسنده , , C. and Pierron-Bohnes، نويسنده , , V.، نويسنده ,
Abstract :
We demonstrate the possibility of growing good-quality epitaxial Fe films on a Si(001) substrate, opening up new prospects to prepare ferromagnetic superlattices on this substrate. A template technique prevents the formation of disordered interfacial iron silicides. Transmission electron microscopy reveals that the Fe layers are fairly uniform in thickness with abrupt interfaces and in majority epitaxial relationship Fe(001)[100]//Si(001)[100]. Both the diffraction data and the observation of Moiré fringes indicate that the Fe lattice is almost relaxed towards its bulk bcc phase in thick layers [≥40 monolayers (ML)] but is still strained by the substrate in the thinnest films. Magneto-optical Kerr effect measurements show that the films evaporated at normal incidence with a thickness above 4 ML are ferromagnetic at room temperature and exhibit in-plane biaxial anisotropy.
Keywords :
Silicon , Single crystal epitaxy , Magnetic measurements , Metal–semiconductor magnetic thin film structures , Iron , Silicides , Molecular Beam Epitaxy , Transmission high-energy electron diffraction
