Title of article :
A kinetic scanning tunneling microscopy study of iron silicide growth on Si(113)
Author/Authors :
M. and Kneppe، نويسنده , , M. and Dorna، نويسنده , , V. and Kohstall، نويسنده , , P. and Kot، نويسنده , , Sophie E. and Kِhler، نويسنده , , U.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2000
Pages :
5
From page :
802
To page :
806
Abstract :
High-temperature kinetic scanning tunneling microscopy (STM) studies are used to investigate the surface morphology and growth mode of iron silicide on Si(113) formed by gas-source reactive iron deposition with Fe(CO)5 as precursor. The first monolayer of silicide on Si(113) forms a (4×n) reconstruction that covers the surface completely before growth proceeds via the formation of strongly anisotropic, three-dimensional silicide islands. After the first monolayer is closed, growth is slowed down by a blocked interdiffusion with the silicon substrate and a reduced sticking probability for the precursor. Lateral spreading of the islands is achieved by a stoichiometric codeposition of iron and silicon using Fe(CO)5 and Si2H6. In this way, nearly closed layers of silicide can be grown.
Keywords :
Silicides , Single crystal epitaxy , Low energy electron diffraction (LEED) , Metal–semiconductor nonmagnetic thin film structures , Scanning tunneling microscopy
Journal title :
Surface Science
Serial Year :
2000
Journal title :
Surface Science
Record number :
1688392
Link To Document :
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