α-Sn pseudomorphic growth on InSb (111) and (111) surfaces: a high-resolution photoemission study

The Sn–InSb interface and α-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality α-Sn(111)-(1×1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates.