Title of article
α-Sn pseudomorphic growth on InSb (111) and (111) surfaces: a high-resolution photoemission study
Author/Authors
Fantini، نويسنده , , Paolo and Gardonio، نويسنده , , Sandra and Barbieri، نويسنده , , Pietro and del Pennino، نويسنده , , Umberto and Mariani، نويسنده , , Carlo and Grazia Betti، نويسنده , , Maria and Magnano، نويسنده , , Elena and Pivetta، نويسنده , , Marina and Sancrotti، نويسنده , , Massimo، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2000
Pages
9
From page
174
To page
182
Abstract
The Sn–InSb interface and α-Sn ultrathin film formation on the sputter-annealed clean A- and B-type InSb(111) surfaces are studied by high-resolution UV photoelectron spectroscopy. The valence band and In-4d core levels, along with the relieving of the clean surface reconstruction, suggest a model for the interface formation at low coverage. At higher Sn thickness a good-quality α-Sn(111)-(1×1) layer is formed, and the In-4d and Sn-4d core-level analysis shows a slight In interdiffusion present on both substrates.
Keywords
Indium antimonide , Metal–semiconductor interfaces , Surface chemical reaction , Surface electronic phenomena (work function , Surface states , Photoelectron spectroscopy , Surface potential , TIN , epitaxy , GROWTH , etc.)
Journal title
Surface Science
Serial Year
2000
Journal title
Surface Science
Record number
1688818
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