• Title of article

    Molecular dynamics simulation of the thermal conductivities of Si nanowires with various roughnesses

  • Author/Authors

    Chen، نويسنده , , Yi-Ray and Jeng، نويسنده , , Ming Shan and Chou، نويسنده , , Ya Wen and Yang، نويسنده , , Chang Chung، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    5
  • From page
    1932
  • To page
    1936
  • Abstract
    Molecular dynamics (MD) simulations were employed to study the heat transfer in a single crystalline Si nanowire with length smaller than phonon mean free path. Thermal conductivity was calculated using a non-equilibrium method that formed a temperature gradient. The effect of varying roughness sizes and direction on the thermal conductivity at room temperature was studied. It was found that the thermal conductivities were reduced as the size of the roughness increased. Furthermore, variations of the thermal conductivities were more prominent with the perpendicular axis roughness than with the parallel axis roughness. The maximum variation was approximately 63% between smooth and rough models with the same wire size. In addition, the mixed size roughness did not reduce thermal conductivity.
  • Keywords
    Si nanowire , thermal conductivity , Molecular dynamics
  • Journal title
    Computational Materials Science
  • Serial Year
    2011
  • Journal title
    Computational Materials Science
  • Record number

    1688854