Title of article
Molecular dynamics simulation of the thermal conductivities of Si nanowires with various roughnesses
Author/Authors
Chen، نويسنده , , Yi-Ray and Jeng، نويسنده , , Ming Shan and Chou، نويسنده , , Ya Wen and Yang، نويسنده , , Chang Chung، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
1932
To page
1936
Abstract
Molecular dynamics (MD) simulations were employed to study the heat transfer in a single crystalline Si nanowire with length smaller than phonon mean free path. Thermal conductivity was calculated using a non-equilibrium method that formed a temperature gradient. The effect of varying roughness sizes and direction on the thermal conductivity at room temperature was studied. It was found that the thermal conductivities were reduced as the size of the roughness increased. Furthermore, variations of the thermal conductivities were more prominent with the perpendicular axis roughness than with the parallel axis roughness. The maximum variation was approximately 63% between smooth and rough models with the same wire size. In addition, the mixed size roughness did not reduce thermal conductivity.
Keywords
Si nanowire , thermal conductivity , Molecular dynamics
Journal title
Computational Materials Science
Serial Year
2011
Journal title
Computational Materials Science
Record number
1688854
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