• Title of article

    GW calculations on La3Ta0.5Ga5.5O14 with oxygen vacancies at non-equivalent sites

  • Author/Authors

    Chung، نويسنده , , Chan-Yeup and Yaokawa، نويسنده , , Ritsuko and Mizuseki، نويسنده , , Hiroshi and Kawazoe، نويسنده , , Yoshiyuki، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    43
  • To page
    47
  • Abstract
    Langatate (La3Ta0.5Ga5.5O14, LTG) has been widely used in piezoelectric sensors in high temperature applications because of its structural and piezoelectric reliability at high temperature. However, in the low oxygen partial pressure and elevated temperature ranging from 300 to 700 °C, an increase of electrical conductivity originated from intrinsic oxygen vacancies have been observed in a previous experimental result. In this study, to elucidate the oxygen vacancies effects on LTG, formation energy of each electronic state of oxygen vacancies ( V O , V O and V O × ) at non-equivalent Wyckoff positions (2d and 6g) and their electronic structures were calculated by combining GW quasi-particle scheme and conventional density functional theory (DFT). The formation energy of VO(6g) was lower than the formation energy of VO(2d) in each electronic state. Thus, relatively stable oxygen vacancies at 6g sites (VO(6g)) can be major oxygen vacancies in LTG system. Also, calculated band gaps of LTG with thermodynamically stable defects such as V O ( 6 g ) or V O ( 6 g ) × were higher than band gaps of LTG with V O ( 2 d ) or V O ( 2 d ) × at Γ-point. By the band interpolation based on Boltzmann transport theory, calculated electrical conductivities per unit relaxation time (σ/τ) of the LTG with V O ( 2 d ) and V O ( 6 g ) were similar at the same electron energy, however, σ/τ of the LTG with V O ( 2 d ) × was higher than that of the LTG with V O ( 6 g ) × .
  • Keywords
    langatate , La3Ta0.5Ga5.5O14 , Density functional theory , Boltzmann transport calculation , GW calculation , oxygen vacancy
  • Journal title
    Computational Materials Science
  • Serial Year
    2012
  • Journal title
    Computational Materials Science
  • Record number

    1689486