Title of article :
Electronic structure and optical transition in heavy metal doped ZnO by first-principle calculations
Author/Authors :
Zhang، نويسنده , , X.D. and Guo، نويسنده , , M.L. and Shen، نويسنده , , Y.Y. and Liu، نويسنده , , C.L. and Xue، نويسنده , , Y.H. and Zhu، نويسنده , , F. and Zhang، نويسنده , , L.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
6
From page :
75
To page :
80
Abstract :
We present the electronic states and enhancement features of optical transition in heavy metal doped ZnO, and reveal the intrinsic electronic structure by using an ab initio pseudopotential method based on density functional calculations. Structural calculations show that the Ag- and Au-doped ZnO crystals have lattice distortion of 0.09–0.1 Å for a and 0.13–0.15 Å for c, respectively. Band structure calculations reveal that the energy levels of Ag- and Au-doped ZnO are above the VBM of pure ZnO 0.12 eV and 0.4 eV, respectively. Ag 4d and Au 5d states have shallow energy level located near the valence band, and can enhance the electronic states of valence band. Furthermore, the results of imaginary part of dielectric function ɛ2(ω) indicate that the Ag- and Au-doped ZnO can induce enhancement of UV band-edge transition which is due to the Ag 4d (Au 5d) states–Zn 4s states transition. The optical transition of Ag-doped ZnO is concentration-dependent and Ag 4d states suffer the transformation from the discrete energy states to localized states. Besides, the role of shallow Zn 3d and Ag 4d electrons is critically examined, and the available experimental data are used to compare with the calculated results.
Keywords :
ZNO , Total-energy pseudopotential method , Density functional theory , Electronic structure , Optical transition
Journal title :
Computational Materials Science
Serial Year :
2012
Journal title :
Computational Materials Science
Record number :
1689490
Link To Document :
بازگشت