Title of article :
Surface conductance of Si(1 0 0)2×1 and Si(1 1 1)7×7
Author/Authors :
Yoo، نويسنده , , Kwonjae and Weitering، نويسنده , , Hanno H. Leuchte، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
The surface conductance of Si(1 0 0)2×1 and Si(1 1 1)7×7 was measured as a function of temperature on a fully-depleted Si/SiO2/Si substrate. The surface conductance of Si(1 0 0)2×1 shows a clear signature of the c(4×2)→2×1 order–disorder surface phase transition near 200 K. The surface conductance of Si(1 1 1)7×7 increases dramatically after passivation with molecular oxygen. This phenomenon is not yet understood.
Keywords :
Silicon , Semiconducting surfaces , Low energy electron diffraction (LEED) , Scanning tunneling microscopy , Oxidation , Surface electrical transport (surface conductivity , surface recombination , etc.)
Journal title :
Surface Science
Journal title :
Surface Science
