Title of article :
A low-temperature scanning tunneling microscopy study on the Sn- and Zn-doped InP(1 1 0) surfaces
Author/Authors :
de Kort، نويسنده , , R and Kets، نويسنده , , W and van Kempen، نويسنده , , H، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
A low-temperature scanning tunneling microscope has been used to study the (1 1 0)-cleavage surface of indium phosphide (InP) at 4.2 K. InP is a III–V compound semiconductor, and we studied the behavior of doping atoms at different bias voltages in both n- and p-type InP. In neither the n- nor the p-type InP did we observe Friedel oscillations, but the p-type InP with a Zn-dopant concentration of 2.7×1018 cm−3 showed an interesting behavior at positive sample voltages: upon moving the tip Fermi level to the bottom of the conduction band, we observed that depressions in the surface topography caused by the influence of the Zn doping atoms changed into elevations with a triangular shape. This has previously been observed on p-type GaAs(1 1 0), and an explanation for these triangular features is not yet available.
Keywords :
Low index single crystal surfaces , Surface states , Roughness , Tunneling , Indium phosphide , Surface electronic phenomena (work function , Surface potential , Surface defects , etc.) , Semiconducting surfaces , surface structure , and topography , morphology , Scanning tunneling microscopy
Journal title :
Surface Science
Journal title :
Surface Science
