Title of article :
Transition from 2D to 3D growth during Ag/Si(1 1 1)-(7×7) heteroepitaxy
Author/Authors :
Sobot??k، نويسنده , , Pavel and O?t’?dal، نويسنده , , Ivan and Myslive?ek، نويسنده , , Josef and Jarol??mek، نويسنده , , Tom?? and Lavick?، نويسنده , , Franti?ek، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
The Stranski–Krastanov growth of Ag on Si(1 1 1)-(7×7) surface at coverages from 0.5 to 2.5 ML, different temperatures (<500 K) and deposition rates has been investigated by STM. A 2D wetting layer with complex structure has been observed. Deposition beyond critical thickness leads to the formation of 3D islands with a very low height-to-size ratio. The critical thickness increases with temperature. At the onset of 3D growth almost all islands have a uniform height of 2 ML of Ag(1 1 1). During further deposition, 3D islands higher than 2 ML appear. The top layers of the islands are always fully completed. 3D island densities, size and height distributions are discussed. A qualitative change in the morphology of the wetting layer and the temperature dependence of 3D island density at elevated temperatures have been observed.
Keywords :
epitaxy , surface structure , Growth , morphology , Roughness , silver , Metal–semiconductor interfaces , Silicon , and topography
Journal title :
Surface Science
Journal title :
Surface Science