Title of article :
XSW study of oxygen/alkali metal/Si(1 1 1) interfaces
Author/Authors :
Sلnchez-Hanke، نويسنده , , C. and Etelنniemi، نويسنده , , V. and Hille، نويسنده , , A. and Materlik، نويسنده , , G. and Michel، نويسنده , , E.G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
4
From page :
1283
To page :
1286
Abstract :
The X-ray standing wave technique has been applied to investigate the localization of oxygen adsorbed on clean Si(1 1 1)7×7 and Si(1 1 1) partly covered by alkali metal (Na, K) atoms. To this end we scanned over the Si(1 1 1) Bragg reflection excited with 3.3 keV photons while detecting the O 1s core level. O 1s photoelectrons with ∼2.7 keV kinetic energy where detected with a resolution high enough to resolve chemically shifted components in the O 1s core level separated by ∼1 eV. This allows to perform a chemical-state-resolved X-ray standing-wave analysis. The possibility of detecting low Z elements opens a new field to the use of the X-ray standing-wave technique.
Keywords :
Metal–semiconductor interfaces , Silicon , alkali metals , X-ray standing waves , Chemisorption , Oxygen
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1690344
Link To Document :
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