Title of article :
Cross-sectional high-resolution transmission electron microscopy observation of Si(1 1 3) 3×2 structure
Author/Authors :
Takeguchi، نويسنده , , Masaki and Tanaka، نويسنده , , Miyoko and Yasuda، نويسنده , , Hidehiro and Furuya، نويسنده , , Kazuo، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
7
From page :
1385
To page :
1391
Abstract :
Atomic structure of Si(1 1 3) 3×2 reconstructed surface was examined by high-resolution transmission electron microscopy (HRTEM). Cross-sectional atomic structure of the Si(1 1 3) 3×2 was observed along [1̄ 1 0] direction at specimen temperature of about 800 K inside an ultrahigh vacuum transmission electron microscope. Simulated images for some probable structure models were compared with the experimental HRTEM images. It was found that, if void area in Ranke’s model is filled by adatom so that a row of adatoms is created, the simulated HRTEM image shows good agreement with the observed one. The structure model recommended by Dabrowski et al. [Surf. Sci. 331–333 (1995) 1022; Phys. Rev. Lett. 73 (1994) 1660] was not able to explain the HRTEM images obtained in the present work.
Keywords :
Electron microscopy , surface structure , morphology , and topography , Roughness , Silicon , High index single crystal surfaces
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1690381
Link To Document :
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