Title of article :
Low temperature phases of Pb/Si(1 1 1)
Author/Authors :
Custance، نويسنده , , O. and G?mez-Rodr??guez، نويسنده , , J.M. and Bar?، نويسنده , , A.M. and Juré، نويسنده , , L. and Mallet، نويسنده , , P. and Veuillen، نويسنده , , J.-Y.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Abstract :
In this work the low temperature phases of Pb/Si(1 1 1) have been investigated by means of variable temperature scanning tunneling microscopy (STM). Our STM measurements, performed in the range of 55–215 K, show that two different phases, i.e. Pb/Si(1 1 1)-(3×3) and Pb/Si(1 1 1)-32−11, coexist for samples with a nominal Pb coverage below 1 ML. The general morphology as well as the atomic structure of both surface reconstructions are discussed and compared to previous results.
Keywords :
Lead , epitaxy , Roughness , surface structure , morphology , Scanning tunneling microscopy , Silicon , and topography , GROWTH
Journal title :
Surface Science
Journal title :
Surface Science
