Title of article :
An scanning tunnelling microscopy study of the diffusion of a single or a pair of atomic vacancies
Author/Authors :
Mayne، نويسنده , , Andrew J and Rose، نويسنده , , Franck and Bolis، نويسنده , , Cyril and Dujardin، نويسنده , , Gérald، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2001
Pages :
13
From page :
226
To page :
238
Abstract :
A single or a pair of atomic vacancies have been created artificially with the scanning tunnelling microscope (STM) tip on the Ge(1 1 1) surface and their displacement across the surface studied. There appears to be no interaction between the two vacancies when they are separated by a long distance. However, when two vacancies met such that they occupied neighbouring sites on the Ge(1 1 1) surface, they were found to interact with each other. A time analysis of the diffusion showed that the pairing of vacancies gives rise to a stabilisation in energy of 0.03 and 0.02 eV depending on the exact location of the two vacancies on the surface. Thus, the pairing of two neighbour vacancies can be thought of as the formation of a pseudo-molecule. To obtain the necessary site dependent hopping rates of a single vacancy and a pair of vacancies, a new integration formalism was derived which takes into account the fact that the time interval between STM measurements is of the same order as the characteristic time of the dynamics under study.
Keywords :
Scanning tunneling microscopy , surface diffusion , Models of surface kinetics , Surface defects , Germanium , Adatoms , Low index single crystal surfaces , Semiconducting surfaces
Journal title :
Surface Science
Serial Year :
2001
Journal title :
Surface Science
Record number :
1690433
Link To Document :
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