Title of article
An STM study of the Si(0 0 1)(2×4)-Dy surface
Author/Authors
Liu، نويسنده , , B.Z. and Nogami، نويسنده , , J.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
399
To page
405
Abstract
Dy grows on the Si(0 0 1) surface in a Stranski–Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2×4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.
Keywords
Silicon , Scanning tunneling microscopy , Roughness , Lanthanides , morphology , and topography , Silicides , surface structure
Journal title
Surface Science
Serial Year
2001
Journal title
Surface Science
Record number
1691456
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