• Title of article

    An STM study of the Si(0 0 1)(2×4)-Dy surface

  • Author/Authors

    Liu، نويسنده , , B.Z. and Nogami، نويسنده , , J.، نويسنده ,

  • Issue Information
    هفته نامه با شماره پیاپی سال 2001
  • Pages
    7
  • From page
    399
  • To page
    405
  • Abstract
    Dy grows on the Si(0 0 1) surface in a Stranski–Krastanov mode, where silicide islands coexist with a reconstructed substrate surface. This paper examines the superstructure of a 2×4 reconstruction of the substrate. A proposed atomic model for the surface is related to the structure of the bulk Dy silicide, in which one deposited Dy atom replaces one Si dimer on the top layer and is located in a similar position to that of Dy atoms in the silicide. As a result, the 2D reconstruction is believed to be the first step to forming a silicide.
  • Keywords
    Silicon , Scanning tunneling microscopy , Roughness , Lanthanides , morphology , and topography , Silicides , surface structure
  • Journal title
    Surface Science
  • Serial Year
    2001
  • Journal title
    Surface Science
  • Record number

    1691456