Title of article :
Ion fraction map of He+ scattered from a Si(1 0 0)-(2×1) surface
Author/Authors :
I. Vaquila، نويسنده , , I and Bolotin، نويسنده , , I.L and Ito، نويسنده , , T and Makarenko، نويسنده , , B.N and Rabalais، نويسنده , , J.W، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
9
From page :
187
To page :
195
Abstract :
Scattering and recoiling imaging spectrometry in the blocking configuration is used to obtain a three-dimensional ion fraction map of 5 keV He+ scattered from a Si(1 0 0)-(2×1)-two domain surface. The scattered ion fractions Y are highly sensitive to the alignment of the He+ beam with the crystal geometry, with Y varying from a minimum of 2% to a maximum of 10%. Scattering and recoiling imaging code simulations, including Auger-neutralization and charge exchange in the close collision, show that the highest Y values correspond to ions that collide with Si atoms in the outermost surface layers. The experimentally measured fraction of He+ surviving as ions from the surface layers are as follows: Y1st∼70%, Y2nd∼25%, and Y3rd∼5%. After fitting the experimental charge fraction with the two adjustable parameters v0 (characteristic velocity) and Pc (charge exchange probability in the close collision) for three blocking exit angles of 35°, 45°, and 55°, good agreement between experiment and simulation was found for v0=(1.9±0.1)×107 cm/s and Pc=0.34±0.09.
Keywords :
Low energy ion scattering (LEIS) , Ion–solid interactions , Silicon , Low index single crystal surfaces , Semi-empirical models and model calculations
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1691629
Link To Document :
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