Author/Authors :
Warren، نويسنده , , S. and Reitzle، نويسنده , , A. and Kazimirov، نويسنده , , A. and Ziegler، نويسنده , , J.C. and Bunk، نويسنده , , O. and Cao، نويسنده , , L.X. and Renner، نويسنده , , F.U. and Kolb، نويسنده , , D.M. and Bedzyk، نويسنده , , M.J. and Zegenhagen، نويسنده , , J.، نويسنده ,
Abstract :
Electroless deposition of gold in monolayer amounts on hydrogen terminated Si(1 1 1) was studied by a variety of structure sensitive techniques. Rutherford back scattering data revealed a linear relationship between the Au coverage and the concentration of the Au solution used for deposition. Atomic force microscopy and surface X-ray diffraction studies indicated cluster formation, with the Au(1 1 1) face epitaxially aligned to the Si(1 1 1):H substrate. However, X-ray standing wave experiments at coverage below one monolayer suggested the formation of a gold layer. Both clusters and isolated Au atoms appear to be present at all coverages, which is explained by the formation of type of Au `wetting layerʹ, in addition to cluster formation which increases as the coverage increases.
Keywords :
Gold , Silicon , Single crystal surfaces , Solid–liquid interfaces , Electrochemical methods , and reflection , X-Ray scattering , X-ray standing waves , epitaxy , Diffraction
