Title of article
Negative differential resistance induced by the Jahn–Teller effect in single molecular coulomb blockade devices
Author/Authors
Ying، نويسنده , , Huahu and Zhou، نويسنده , , Wu-Xing and Chen، نويسنده , , Ke-Qiu and Zhou، نويسنده , , Guanghui، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
33
To page
36
Abstract
Using valence bond theory in combination with a master equation technique, we have investigated the electron transport properties of benzene-based coulomb blockade devices. The results show that the benzene molecule undergoes a Jahn–Teller distortion when ionized, which lifts the state degeneracy. The lifted degenerate states couple differently to the left and right electrodes, leading to negative differential resistance. This type of negative differential resistance involves the Jahn–Teller effect and symmetry-breaking, which provides a way to design coulomb blockade devices with negative differential resistance behavior.
Keywords
Electronic transport in nanoscale systems , Negative differential resistance , Jahn–Teller effect
Journal title
Computational Materials Science
Serial Year
2014
Journal title
Computational Materials Science
Record number
1691879
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