Title of article
The physical origin of the InSb(111)A surface reconstruction transient
Author/Authors
Proessdorf، نويسنده , , A. and Rodenbach، نويسنده , , Rui P. and Grosse، نويسنده , , F. and Hanke، نويسنده , , M. and Braun، نويسنده , , W. and Riechert، نويسنده , , H. and Hu، نويسنده , , W. and Fujikawa، نويسنده , , S. and Kozu، نويسنده , , M. and Takahasi، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2012
Pages
4
From page
1458
To page
1461
Abstract
The InSb(111)A surface is prepared by molecular beam epitaxy and investigated by reflection high-energy electron diffraction (RHEED). The complete two dimensional diffraction pattern is mapped out by azimuthal RHEED (ARHEED). Two reconstructions are identified and additionally a set of new symmetries is observed. At low temperature a 2 3 × 2 3 pattern is observed which changes to the (2 × 2) pattern at high temperature. In contrast to the GaSb(111)A surface the observed 2 3 × 2 3 structure is not stabilized by configurational entropy.
Keywords
Molecular Beam Epitaxy , antimonides , Semiconducting III–V materials , Reflection high energy electron diffraction , surface reconstruction
Journal title
Surface Science
Serial Year
2012
Journal title
Surface Science
Record number
1692381
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