Title of article
Structural study of 2D dysprosium germanide and silicide by means of quantitative LEED I–V analysis
Author/Authors
Bonet، نويسنده , , C. and Spence، نويسنده , , D.J. and Tear، نويسنده , , S.P.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
8
From page
183
To page
190
Abstract
Quantitative low energy electron diffraction (LEED) studies have been carried out to determine the structure of the rare-earth germanide Ge(1 1 1)1×1–Dy and the rare-earth silicide Si(1 1 1)1×1–Dy. The analyses reveal structures similar to that of other rare-earth silicides previously studied in which the dysprosium is located sub-surface below a reverse-buckled silicon/germanium bilayer. The LEED study has clearly demonstrated that the dysprosium atom is located above a substrate T4 site and refines earlier MEIS results.
Keywords
Low energy electron diffraction (LEED) , Lanthanides , Silicon , Metal–semiconductor interfaces , Silicides , Germanium
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1693946
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