Title of article :
Initial stages of adsorption in the Cu/Si(1 1 1) system
Author/Authors :
Shukrinov، نويسنده , , P. and Savchenkov، نويسنده , , A. and Mutombo، نويسنده , , P. and Chلb، نويسنده , , V. and Slezلk، نويسنده , , J.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
The adsorption of Cu atoms on a Si(1 1 1)-7×7 surface was studied using scanning tunnelling microscopy. Two different kinds of clusters were found at room temperature and we associate them with copper atoms embedded in subsurface layers. Short annealing at ∼550 °C stimulates a reaction, leading to the substitution of corner Si adatoms in the 7×7 unit cell. This configuration is stable with respect to continuing thermal processing.
Keywords :
Copper , Scanning tunneling microscopy , Surface chemical reaction , surface segregation , Silicon , Metal–semiconductor interfaces
Journal title :
Surface Science
Journal title :
Surface Science
