Auger depth profile analysis and photoluminescence investigations of Zn1−xMgxSe alloys

Zn1−xMgxSe crystals grown by the high-pressure Bridgman method for 0<x<0.38 were investigated. Composition of the samples was determined by electron microprobe analysis. Photoluminescence (PL) spectra were measured in the temperature range from 40 K up to room temperature. It was found that PL spectra measured at 40 K, consist of the exciton, edge and deep level emission bands. The broadening of PL bands due to compositional and structural disorder was observed. Auger electron spectroscopy (AES) together with argon ion sputtering was used to determine sub-surface composition of Zn1−xMgxSe crystals. AES depth profiles, obtained by ion milling of the samples and consecutive Auger analysis, allowed to obtain distribution of Zn, Mg and Se near the crystal surface.