Title of article
Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures
Author/Authors
Rudamas، نويسنده , , C. and Mart??nez-Pastor، نويسنده , , J. and Gonz?lez، نويسنده , , L. and Vinattieri، نويسنده , , A. and Colocci، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
5
From page
619
To page
623
Abstract
GaAs/InxGa1−xP quantum wells, with x=0.541 and 0.427, have been investigated by continuous wave and time resolved photoluminescence. Spatial localization of excitons due to alloy compositional defects seem to be responsible of the observed phenomenology: non-exponential decay behavior at long times and slow decrease of the effective recombination time by increasing temperature. A two-class exciton kinetic model, based on a mobility edge varying with the temperature explain the experimental results.
Keywords
Quantum wells , quantum effects , Gallium arsenide , Molecular Beam Epitaxy , Photoluminescence
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694510
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