Title of article :
Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(1 0 0)
Author/Authors :
Chen، نويسنده , , Gang and Wan، نويسنده , , Jun and Yang، نويسنده , , Jianshu and Ding، نويسنده , , Xunming and Ye، نويسنده , , Ling and Wang، نويسنده , , Xun، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Pages :
8
From page :
203
To page :
210
Abstract :
The surface structures of thin erbium silicide layers formed on Si(1 0 0) substrate by solid phase epitaxy are studied by using the in situ high energy electron diffraction, low energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and ex situ grazing X-ray diffraction. Nanowires and nanoislands of Er silicide coexist on the Si substrate surface and a c(2×2) reconstruction is observed on the top of these nanostructures. The crystalline structure of the Er silicide nanostructure is found to be tetragonal ErSi2. A Si-adatom model for the c(2×2) reconstruction is proposed. The total energy calculation based on the discrete-variational self-consistent multipolar cluster method identifies that the hollow site Si adatom model might be the most energetically favorable one.
Keywords :
surface energy , Lanthanides , Surface relaxation and reconstruction , Metal–semiconductor interfaces , epitaxy , Silicides
Journal title :
Surface Science
Serial Year :
2002
Journal title :
Surface Science
Record number :
1694676
Link To Document :
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