Title of article
Ion bombardment-induced changes in the electronic structure of Cu(1 1 0) investigated with inverse photoemission and computer simulations
Author/Authors
Heskett، نويسنده , , D. and DePietro، نويسنده , , D. Di Sabatino، نويسنده , , G. and Tammaro، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
7
From page
405
To page
411
Abstract
We have used the technique of inverse photoemission spectroscopy to investigate the changes in the surface state intensity of an unoccupied surface state on the clean Cu(1 1 0) surface due to Ne+ ion bombardment of the surface. Using Monte Carlo simulations to model the sputtering process, we are able to determine the approximate surface cell size of 12×12 atoms that is required to support such a well-defined unoccupied surface state.
Keywords
Surface potential , etc.) , Copper , Low index single crystal surfaces , Metallic surfaces , Monte Carlo simulations , computer simulations , Inverse photoemission spectroscopy , sputtering , Surface electronic phenomena (work function , Surface states
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694747
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