Title of article :
Ion bombardment-induced changes in the electronic structure of Cu(1 1 0) investigated with inverse photoemission and computer simulations
Author/Authors :
Heskett، نويسنده , , D. and DePietro، نويسنده , , D. Di Sabatino، نويسنده , , G. and Tammaro، نويسنده , , M.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2002
Abstract :
We have used the technique of inverse photoemission spectroscopy to investigate the changes in the surface state intensity of an unoccupied surface state on the clean Cu(1 1 0) surface due to Ne+ ion bombardment of the surface. Using Monte Carlo simulations to model the sputtering process, we are able to determine the approximate surface cell size of 12×12 atoms that is required to support such a well-defined unoccupied surface state.
Keywords :
Surface potential , etc.) , Copper , Low index single crystal surfaces , Metallic surfaces , Monte Carlo simulations , computer simulations , Inverse photoemission spectroscopy , sputtering , Surface electronic phenomena (work function , Surface states
Journal title :
Surface Science
Journal title :
Surface Science
