Title of article
Growth and structure of Fe, Co and Ni films on hydrogen-terminated Si(1 1 1) surfaces
Author/Authors
Gruyters، نويسنده , , M.، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2002
Pages
8
From page
53
To page
60
Abstract
Scanning tunneling microscopy (STM), low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and X-ray diffraction (XRD) have been used to provide a detailed analysis of the growth and structure of thin 3d transition metal films on H/Si(1 1 1)1×1 substrates. The high homogeneity and chemical integrity of wet chemically prepared substrates has been demonstrated by STM, LEED and AES. For room temperature deposition of Co, STM measurements have revealed an island growth mode and the formation of dense granular films. It has also been evidenced by XRD that hydrogen-terminated Si(1 1 1) substrates enable film growth with single crystalline surface orientation for Fe, Co and Ni.
Keywords
Scanning tunneling microscopy , growth , Silicon , Metallic films
Journal title
Surface Science
Serial Year
2002
Journal title
Surface Science
Record number
1694828
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