Formation mechanism of the Si(1 1 1)7×7 reconstruction studied by scanning tunneling microscopy: Zipper-like restructuring in the sequential size changes of isolated single faulted-halves

The formation mechanism of the 7×7 reconstruction on annealed Si(1 1 1) surfaces has been demonstrated at the atomic level. In situ observations of unreconstructed regions (‘1×1’) on terraces after rapid quenching to 380 °C were done using scanning tunneling microscopy (STM) with a scanning speed of 1.7 s per frame. In the narrow ‘1×1’ regions, we imaged isolated single-faulted (F) halves of the dimer–adatom–stacking-fault (DAS) structure from “birth” to “death”. During “life”, the isolated single F-halves frequently changed their size. The size changes between odd-sized F-halves always took place through even-sized F-halves of intermediate sizes: 5×5-F′↔6×6-F↔7×7-F′↔8×8-F↔9×9-F′↔10×10-F↔11×11-F′↔12×12-F↔13×13-F′, where the 5×5-F′, 7×7-F′ and so forth are irregular-type structures of the odd-sized F-halves. Even-sized F-halves and the irregular-type structures are necessary in the size changes, whereas the regular-type structures have never been involved. Lifetimes of the 10×10-F, 8×8-F, and 6×6-F at 380 °C are about 10.5, 6, and 2–3 s, respectively, which are much shorter than those of the isolated irregular-type structures of the odd-sized F-halves. With the aid of room temperature STM images of a rapidly quenched surface, we determined the atomic structures of the even-sized F-halves. We have proposed a sequential size change (SSC) model, including undiscovered parts of the size changes ‘1×1’ ↔2×2-F↔3×3-F′↔4×4-F↔5×5-F′, as the formation and decay mechanism of isolated single F-halves in the ‘1×1’ region. The SSC model has the following sequence: ‘1×1’ ↔ 2×2-F↔3×3-F′↔4×4-F↔5×5-F′↔6×6-F↔7×7-F′↔8×8-F↔9×9-F′↔10×10-F↔11×11-F′↔12×12-F↔13×13-F′. It was found by collecting statistics of size-change directions that one of two equivalent sides of the irregular-type structures, which have a mirror symmetry, is involved in the size changes thus indicating that other parts of the F-halves remain unchanged. Based on such findings, we have proposed the atomic processes for bond-rearrangements in the SSC model. The bond-rearrangements proceed along one side of a triangular F-half by breaking the existing dimers and forming new dimers like a “zipper”. Proposed atomic processes of the zipper-like restructuring are illustrated by a ball-and-stick model. The reason for the appearance of the even-sized F-halves and the irregular-type structures of the odd-sized ones is discussed in terms of the energy barrier heights along a reaction path in the size change of single F-halves.