Title of article :
Initial stages of erbium disilicide formation on Si(0 0 1)
Author/Authors :
Yang، نويسنده , , Jianshu and Cai، نويسنده , , Qun and Wang، نويسنده , , X.-D. and Koch، نويسنده , , R.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Abstract :
The initial stages of ErSi2 formation on Si(0 0 1) are investigated by scanning tunneling microscopy and low energy electron diffraction. At sub-monolayer coverages two Er-induced superstructures are observed, where Er dimers are replacing the Si dimers. In the c(4×2) phase Er dimers alternate with Si dimers both along and perpendicular to the Si dimer row direction. The (2×3) phase, which evolves naturally from the c(4×2) phase with increasing coverage, consists of two adjacent chains of Er dimers and can be regarded as a precursor of the strain-field-controlled ErSi2 nanowire growth.
Keywords :
Scanning tunneling microscopy , morphology , Roughness , Lanthanides , and topography , Silicon , surface structure
Journal title :
Surface Science
Journal title :
Surface Science