Atomic force microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films

Atomic force microscopy based techniques have been used to analyse at a nanometer scale the topographical features measured in microelectronic SiO2 layers after their dielectric breakdown (BD). The results show that the morphological changes are not real modifications of the oxide surface, but a consequence of the electrostatic interactions between the tip and the negative charge induced in the oxide during the BD event.