Title of article :
Single electron devices for simulating read-out in a solid state quantum computer
Author/Authors :
Buehler، نويسنده , , T.M. and Reilly، نويسنده , , D.J. and Starrett، نويسنده , , R.P. and Hamilton، نويسنده , , A.R. and Brenner، نويسنده , , R. A. Kenyon، نويسنده , , S. and Court، نويسنده , , N. and Dzurak، نويسنده , , A.S. and Clark، نويسنده , , R.G.، نويسنده ,
Issue Information :
هفته نامه با شماره پیاپی سال 2003
Pages :
5
From page :
1199
To page :
1203
Abstract :
The radio frequency single electron transistor (rf-SET) is a prime candidate for reading out the final state of a qubit in a solid state quantum computer. Such a measurement requires the detection of sub-electron charge motion in the presence of random charging–decharging events associated with traps in the neighboring material system and SET tunnel junctions. Here we present a detection scheme together with experimental data from two dc-SETs where the signals from each are cross-correlated both temporally and spatially to suppress uncorrelated events arising from charge traps in the substrate and oxide. The technique is demonstrated using two dc-SETs that can detect the charge-state of two coupled metal dots, simulating charge transfer and read-out in a two-qubit system. In an effort towards operating the correlated detection scheme on microsecond time-scales, we have demonstrated an ability to detect controlled single electron transfer using an rf-SET.
Keywords :
quantum effects , Electrical transport (conductivity , resistivity , Mobility , Metallic surfaces , etc.)
Journal title :
Surface Science
Serial Year :
2003
Journal title :
Surface Science
Record number :
1696280
Link To Document :
بازگشت