Electrochemical formation of porous superlattices on n-type (1 0 0) InP

The present work deals with the electrochemical formation of superlattice structures on n-type (1 0 0) InP in HCl solutions. The superlattices consist of a stack of two layers with alternating high and low porosity on n-type material obtained by changing the anodizing current or the potential periodically in HCl solutions. The superlattice structures were characterized by scanning electron microscopy. The pore morphology and structure depend strongly on the electrochemical conditions. For anodization with low currents (e.g., 1 or 10 mA) or at low potentials (e.g., 1.5 VAg/AgCl), a porous layer with a facet-like structure was formed. For higher currents or potentials, such as 50 or 100 mA or 3 VAg/AgCl, respectively, a tree-like structure with random and/or tangled branches was observed. Finally, samples anodized at 5 VAg/AgCl, show a porous layer with a regular array of straight pores. The morphology and structure of the stacks of the porous layers can be controlled in the nanometer range, depending on the electrochemical conditions.